OpenLight and Tower Semiconductor have announced the successful demonstration of a 400G/lane modulator, utilizing Tower's integrated silicon photonics platform, PH18DA. This modulator achieves a greater than 3.5dB extinction ratio with PAM-4 modulation at a drive voltage of 0.6 volts peak-to-peak. The collaboration leverages OpenLight's intellectual property on Tower's existing platform, which already supports 100G and 200G/lane applications.

The demonstration aims to facilitate next-generation optical communication architectures, addressing the demand for high-speed data transfer in cloud computing, artificial intelligence (AI), and machine learning applications. Operating at 400G per lane across four CWDM wavelengths, it provides a commercially viable approach for future 3.2T solutions.

Current silicon-based modulators are unable to meet the 400G bitrate requirement, underscoring the industry's need for a cost-effective alternative. Heterogeneous integrated devices, combining 400G modulators with lasers and optical amplifiers on a single photonic integrated circuit, promise advantages including reduced size, increased bandwidth, and manufacturability.

Dr. Adam Carter, CEO of OpenLight, noted, “Our partnership with Tower represents a critical step in the integration of advanced silicon photonics into the datacom landscape. This 400G modulator serves as a drop-in replacement for existing 200G designs, streamlining the transition for customers while maintaining high reliability and performance.” Russell Ellwanger, CEO of Tower Semiconductor, emphasized the collaboration's role in offering scalable and reliable solutions for optical communication technology, highlighting the compatibility with existing structures. Both companies will be present at the upcoming OFC Conference in April 2025, where further discussions on this technology will occur.